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| The figures presented here are SEMS (Semiconductor Equipment Modeling Software) predictions of a CF4 - ICP (inductively coupled plasma) with a flow rate of 20 sccm, an absorbed power of 240 W, and a pressure of 50 mTorr. The SEMS code has been recently developed to model semiconductor processing including neutral gas coupling to the plasma. Traditionally, this coupling is neglected, and in the simplest case the drift-diffusion approximation is used in which a constant neutral gas temperature and total density is assumed. The first four figures show the differences between SEMS (labeled "gas heating") and drift-diffusion approximation in the (a) neutral gas temperature (b) electron temperature (c) CF4 consumption, (d) the negative ion production The final two figures of (e) neutral gas and (f) electron temperature show the effect of the effect of negative ions in the SEMS model. The first four figures include negative ions. The last two show the results with and without F-. |
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If you have trouble viewing this page due to a disability, please contact Amara de Keczer at 650-604-3473 or email at adekeczer@mail.arc.nasa.gov.
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