Electron Flow in Semiconductor and Molecular Nanostructures
The main avenues of experimental research being pursued in various laboratories to build future generations of smaller/faster devices are (i) down sizing of conventional semiconductor devices and (ii) molecular devices.
In a large number of these structures, the length scales and transit times are comparable to the wavelength of the electrons and the scattering times. The focus of my research is to understand and characterize transport through molecular and semiconductor nanostructures. Below are brief descriptions of these two items.
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2D quantum simulations
Our aim is to investigate the influence of the wave nature of electrons on the electronic properties of ultra small structures / devices. We have developed a set of approximations and state of the art computer code to study the following (1D approximations are not made): * Id vs. Vg and Id vs. Vd characteristics for ultra small MOSFETs
Further, our code can handle a wide variety of 2D doping profiles and anisotropic effective mass within the parabolic approximation. The equations we solve are the Non Equilibrium Green's Function and Poisson's equations.
This work is done in collaboration with T. R. Govindan and Alexei Svizhenko. Outside collaborators: Ramesh Venugopal (Purdue University), Mark Lundstrom (Purdue University)
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Our work at this time is focused on carbon nanotubes and DNA. We are using a combination of tight-binding and quantum chemistry methods to study various aspects of current flow in these structures:
Our work in this area has so far used a simple pi orbital tight-binding approach. Based on the numerical expertise we have developed in "2D quantum simulations" in semiconductor nanostructures, we are now extending this frame work to include molecular nanostructures.
This work is done in collaboration with Christophe Adessi, T. R. Govindan, Jie Han, Alexei Svizhenko and Liu Yang. Outside collaborators: James O' Keefe (Stanford University)
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